Lead Zirconium Titanate (PZT)-Based Gate-All-Around Negative-Capacitance Junctionless Nanowire FET for Distortionless Low-Power Applications
- 3 November 2021
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 51 (1) , 196-206
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectricSolid-State Electronics, 2016
- Modeling and simulation study of novel Double Gate Ferroelectric Junctionless (DGFJL) transistorSuperlattices and Microstructures, 2016
- Dopingless ferroelectric tunnel FET architecture for the improvement of performance of dopingless n-channel tunnel FETsSuperlattices and Microstructures, 2016
- Tunable and stable in time ferroelectric imprint through polarization couplingAPL Materials, 2016
- Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device ReliabilityIEEE Transactions on Device and Materials Reliability, 2016
- Study of effect of gate-length downscaling on the analog/RF performance and linearity investigation of InAs-based nanowire Tunnel FETSuperlattices and Microstructures, 2016
- Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect TransistorsAdvances in Science and Technology, 2014
- The potential of Fe-FET for robust design under variations: A compact modeling studyMicroelectronics Journal, 2012
- Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysisMicroelectronics Reliability, 2012
- Electrical characteristics of ferroelectric PZT thin films for DRAM applicationsIEEE Transactions on Electron Devices, 1992