Hall effect measurements of hole mobility in an inversion layer at the Si-SiO2 interface

This publication has 11 references indexed in Scilit:

• On the Temperature Dependence of Hole Mobility in Silicon
  Physica Status Solidi (b), 1970
• Far infrared absorption in fused quartz and soft glass
  Journal of Physics and Chemistry of Solids, 1968
• Transport Properties of Electrons in Inverted Silicon Surfaces
  Physical Review B, 1968
• SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATING
  Applied Physics Letters, 1968
• Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
  Physical Review B, 1967
• Effects of ionizing radiation on oxidized silicon surfaces and planar devices
  Proceedings of the IEEE, 1967
• MOS STUDY OF INTERFACE-STATE TIME CONSTANT DISPERSION
  Applied Physics Letters, 1967
• Experimental study of semiconductor surface conductivity
  Surface Science, 1966
• Carrier Surface Scattering in Silicon Inversion Layers
  IBM Journal of Research and Development, 1964
• Effective Carrier Mobility in Surface-Space Charge Layers
  Physical Review B, 1955