Electrochemical passivation of Si and SiGe surfaces

This publication has 99 references indexed in Scilit:

• In situ Fourier transform P-polarized infrared reflection absorption spectroscopic investigation of an interface properties of SiO2/Si(100) deposited using electron cyclotron resonance microwave plasma at room temperature
  Thin Solid Films, 2000
• Smoothing, passivation and re-passivation of silicon surfaces by anodic oxidation: a low thermal budget process
  Microelectronics Reliability, 2000
• Anodic passivation of SiGe
  Microelectronics Reliability, 2000
• Effect of local surface structure on electronic properties of hydrogenated silicon surfaces
  Microelectronic Engineering, 1999
• Defect generation at silicon surfaces during etching and initial stage of oxidation
  Microelectronic Engineering, 1995
• Electron spin resonance and instabilities in metal insulator semiconductor systems
  Microelectronic Engineering, 1993
• Incorporation of OH radicals in anodic silicon oxide films studied by secondary-ion mass spectroscopy, X-ray photoelectron spectroscopy and ir analysis
  Thin Solid Films, 1990
• The electrophysical properties of anodically grown silicon oxide films
  Thin Solid Films, 1989
• Native defects at the Si/SiO2 interface-amorphous silicon revisited
  Applications of Surface Science, 1985
• Electrochemical investigation of SiO2Si equivalent charges
  Solid-State Electronics, 1981