Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al$_{2}$O$_{3}$/AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistor on Si
- 20 September 2011
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 4 (10) , 104102
Abstract
In this paper, the influence of post-oxide annealing on the DC performance of the atomic-layer-deposited Al2O3/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor on a high-resistivity silicon substrate is reported. With annealing, the maximum transconductance and gate–drain breakdown voltage of the device increased. The threshold voltage positively shifted, and the gate forward current did not change much. The improved quality of the Al2O3 layer after annealing is believed to due to the reduction of the deep level traps or interface states.Keywords
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