Deposition of Nano‐Size Titania—Silica Particles in a Hot‐Wall CVD Process

Authors:
Publisher website
Google Scholar
Abstract
The deposition of nano‐size titania—silica particles is carried out in a hot‐wall CVD reactor by using two premixed precursors, titanium tetraisopropoxide (TTIP) and tetraethyl orthosilicate (TEOS). The deposition occurs mostly in two regions, one near the reactor entrance and the other near the reactor exit. Deposits collected near the reactor entrance are densely packed micrometer‐size aggregates/particles of good adhesion to the substrate, while those near the reactor exit are loosely packed nano‐size particles with a poor adhesion to the substrate. It is conjectured that the more reactive TTIP reacts first and produces TiO 2 particles later covered by SiO 2 formed via a catalytic surface reaction of the less reactive TEOS on TiO 2 particle surfaces. The presence of surface SiO 2 retards the growth of TiO 2 particles, leading to deposits formed by micrometer‐size aggregates containing nano‐size primary particles of 30 to 40 nm in the first deposition region. With less or no SiO 2 present on TiO 2 particle surfaces, the deposits formed in the first deposition region are densely packed micrometer‐size particles. The Ti/Si ratio of the produced particles, for a furnace temperature of 750°C, increases with increasing TTIP/TEOS concentration ratio, and is lower than the Ti/Si ratio of the incoming reactant stream. The Ti/Si ratio of the particles is also found to decrease with increasing furnace temperature.

This publication has 17 references indexed in Scilit: