Gadolinium-based metal oxide for nonvolatile memory applications

This publication has 30 references indexed in Scilit:

• The High-k Solution
  IEEE Spectrum, 2007
• Electrical Characteristics of Memory Devices With a High-$k$$\hbox{HfO}_{2}$ Trapping Layer and Dual $\hbox{SiO}_{2}/\hbox{Si}_{3}\hbox{N}_{4}$ Tunneling Layer
  IEEE Transactions on Electron Devices, 2007
• Charge storage characteristics of atomic layer deposited RuOx nanocrystals
  Applied Physics Letters, 2007
• High Work-Function Metal Gate and High-$kappa$Dielectrics for Charge Trap Flash Memory Device Applications
  IEEE Transactions on Electron Devices, 2005
• A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device
  IEEE Transactions on Electron Devices, 2005
• A Novel MONOS-Type Nonvolatile Memory Using High-$kappa$Dielectrics for Improved Data Retention and Programming Speed
  IEEE Transactions on Electron Devices, 2004
• Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness
  2003
• A low voltage SONOS nonvolatile semiconductor memory technology
  IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, 1997
• High-endurance ultra-thin tunnel oxide in MONOS device structure for dynamic memory application
  IEEE Electron Device Letters, 1995
• A Floating Gate and Its Application to Memory Devices
  Bell System Technical Journal, 1967