Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation
Authors:
- Takeshi OhshimaTOTakeshi Ohshima
- Masahito YoshikawaMYMasahito Yoshikawa
- Hisayoshi ItohHIHisayoshi Itoh
- Yasushi AokiYAYasushi Aoki
- Isamu NashiyamaINIsamu Nashiyama
- 1 August 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (8B) , L1002
Abstract
Enhancement-type n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on 6H-SiC to investigate the influence of γ-ray irradiation on device characteristics. The net number of radiation-induced oxide-trapped charges and interface traps induced by γ-ray irradiation were ∼3×1012/cm2 and ∼5×1011/cm2 after 70 kGy irradiation, respectively. These were measured from changes in the subthreshold-current curve. On comparing the densities of oxide-trapped charges and interface traps produced by irradiation in 6H-SiC MOSFETs with those in Si MOSFETs, the 6H-SiC MOSFETs are found to have high radiation resistance.Keywords
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