High-power operation in 0.98- mu m strained-layer InGaAs-GaAs single-quantum-well ridge waveguide lasers
Authors:
- 1 December 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (12) , 849-851
Abstract
High power strained-layer InGaAs-GaAs graded-index separate confinement heterostructure (GRIN-SCH) single-quantum-well (SQW) lasers at an emission wavelength of 0.98 mu m have been fabricated. A light power as high as 270 mW and a maximum front power conversion efficiency of 51.5% have been obtained for the antireflective and highly-reflective coated laser with 9- mu m-wide ridge and 600- mu m-long cavity.Keywords
This publication has 15 references indexed in Scilit:
- A 980 nm pseudomorphic single quantum well laser for pumping erbium-doped optical fiber amplifiersIEEE Photonics Technology Letters, 1990
- Highly efficient integrated optical fibre amplifier module pumped by a 0.98 μm laser diodeElectronics Letters, 1990
- Noise characteristics of Er/sup 3+/-doped fiber amplifiers pumped by 0.98 and 1.48 mu m laser diodesIEEE Photonics Technology Letters, 1990
- Recent progress in InGaAsP high power lasers1990
- Cavity length dependence of threshold current for quantum well lasersApplied Physics Letters, 1989
- High power and low optical feedback noise AlGaAs single quantum well lasersElectronics Letters, 1989
- High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser arrayApplied Physics Letters, 1988
- Operating characteristics of single-quantum-well AlGaAs/GaAs high-power lasersIEEE Journal of Quantum Electronics, 1988
- A 0.2 W CW laser with buried twin-ridge substrate structureIEEE Journal of Quantum Electronics, 1985
- Degradation of injection lasersJournal of Luminescence, 1973