Standing wave and skin effects in large-area, high-frequency capacitive discharges
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- 14 June 2002
- journal article
- Published by IOP Publishing in Plasma Sources Science and Technology
- Vol. 11 (3) , 283-293
Abstract
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This publication has 22 references indexed in Scilit:
- Modelling of a large scale reactor for plasma deposition of siliconPlasma Sources Science and Technology, 1999
- A voltage uniformity study in large-area reactors for RF plasma depositionPlasma Sources Science and Technology, 1997
- High selectivity plasma etching of silicon dioxide with a dual frequency 27/2 MHz capacitive radio frequency dischargeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996
- Very high frequency capacitively coupled discharges for large area processingJournal of Vacuum Science & Technology A, 1996
- Very high-frequency capacitively coupled argon dischargesPlasma Sources Science and Technology, 1994
- High frequency reactive ion etching of silylated photoresistJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
- Verification of frequency scaling laws for capacitive radio-frequency discharges using two-dimensional simulations*Physics of Fluids B: Plasma Physics, 1993
- Independent control of ion density and ion bombardment energy in a dual RF excitation plasmaIEEE Transactions on Semiconductor Manufacturing, 1993
- Dual excitation reactive ion etcher for low energy plasma processingJournal of Vacuum Science & Technology A, 1992
- Frequency effects in silane plasmas for plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1992