Internal Thermoelectric Cooling in Nanosheet Gate-All-Around FETs Using Schottky Drain Contacts
- 23 June 2021
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 68 (8) , 4156-4160
Abstract
Nanosheet gate-all-around field-effect transistors (NS GAAFETs) suffer from self-heating effects (SHEs), degrading their performance. This work demonstrates that using a Schottky barrier drain contact facilitates simultaneous optimization of the thermal resistance (Rth) and on-current, leading to both ameliorated device performance and thermal reliability. Synopsis Sentaurus TCAD results delineate that thermoelectric cooling at the Schottky drain alleviates the SHEs reducing the maximum lattice temperature (TLmax) of up to 20.12 K compared to that at an ohmic drain contact.Keywords
This publication has 13 references indexed in Scilit:
- Impact of Self-heating on Performance and Reliability in FinFET and GAAFET Designs2019
- Stacked nanowires/nanosheets GAA MOSFET from technology to design enablement2017
- Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET2017
- GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology NodeIEEE Journal of the Electron Devices Society, 2017
- Schottky Barrier Tunnel Field-Effect Transistor using Spacer TechniqueJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014
- Peltier Effect in Semiconductors2014
- Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs2009
- Modeling and Data for Thermal Conductivity of Ultrathin Single-Crystal SOI Layers at High TemperatureIEEE Transactions on Electron Devices, 2006
- Electrodeposition of Ni-Si Schottky barriersIEEE Transactions on Magnetics, 2005
- Work function of metals1979