Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors
Authors:
- Soshi SatoSSSoshi Sato
- Kuniyuki KakushimaKKKuniyuki Kakushima
- Parhat AhmetPAParhat Ahmet
- Kenji OhmoriKOKenji Ohmori
- Kenji NatoriKNKenji Natori
- Keisaku YamadaKYKeisaku Yamada
- Hiroshi IwaiHIHiroshi Iwai
Open Access
- 1 May 2011
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 51 (5) , 879-884
Abstract
No abstract availableKeywords
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