Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency
Authors:
- Kelson D. ChabakKCKelson D. Chabak
- Manuel TrejoMTManuel Trejo
- Dennis E WalkerDWDennis E Walker
- Gregg H. JessenGJGregg H. Jessen
- 15 April 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 31 (6) , 561-563
Abstract
We report on a dc/RF performance of lattice-strained AlInN/GaN high-electron mobility transistors (HEMTs) on SiC substrate. HEMT devices were fabricated with gate periphery of 2 × 150 μm with an 80-nm T-gate and ~2.5-μm source-drain spacing. Fabricated devices simultaneously demonstrated up to 2.11 A/mm with ft-ext = 104 GHz and ft-int = 113 GHz. The high performance is attributed to the combination of low Rsh ~ 230 Ω/sq (μ ~ 1079 cm2/V · s, ns ~ 2.39 × 1013 cm-2) and thin ~110-Å total barrier thickness with a short gate length. Other device parameters include Rc = 0.29 Ω · mm, Ig,leak = 27.9 μA/mm, gm,peak = 432 mS/mm, and Vth = -5.8 V. To our knowledge, this is among the highest current densities reported for any HEMT operating with a unity current gain frequency exceeding 100 GHz.Keywords
This publication has 17 references indexed in Scilit:
- High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin BarrierIEEE Electron Device Letters, 2009
- AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHzIEEE Electron Device Letters, 2009
- InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide RecessIEEE Electron Device Letters, 2009
- Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ PassivationIEEE Electron Device Letters, 2009
- 102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHzIEEE Electron Device Letters, 2009
- AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHzApplied Physics Express, 2008
- Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate DevicesIEEE Transactions on Electron Devices, 2007
- Gate‐lag and drain‐lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTsPhysica Status Solidi (a), 2007
- Evaluation of AlInN/GaN HEMTs on sapphire substrate in microwave, time and temperature domainsElectronics Letters, 2007
- Characteristics of In$_x$Al$_1-x$N–GaN High-Electron Mobility Field-Effect TransistorIEEE Transactions on Electron Devices, 2005