High performance n-MOS finFET by damage-free, conformal extension doping
Authors:
- 1 December 2011
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 35.6.1-35.6.4
Abstract
A solution for conformal n-type finFET extension doping is demonstrated, yielding I ON values of 1.23 mA/μm at I OFF =100 nA/um at 1V. This high device performance results from 40% reduced external resistance, which in term is stemming from 130% increased fin sidewall doping (confirmed by SIMS, SSRM and Atom Probe) relative to ion implant process. In this work we also report lowered gate leakage due to the damage-free extension doping.Keywords
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