Edge contacts offer strong bonding and the potential for lower specific contact resistance to two-dimensional (2D) chalcogenide semiconductors, albeit to a very small area, and they are friendlier to scaling compared to top contacts. Physical vapor deposition (PVD) techniques are often used to fabricate contacts to 2D semiconductors and other electronic devices. However, PVD processes are not as easily scalable for edge contact manufacturing. In this work, we have studied thermal atomic layer deposition (ALD) of TiS2 using tetrakis (dimethylamido) titanium and hydrogen sulfide for forming uniform and conformal edge contacts on single-layer MoS2. Characterization of the TiS2 was performed using Raman spectroscopy, x-ray photoelectron spectroscopy, and scanning transmission electron microscopy to confirm the contact composition. A contact resistance of 130 Ω·mm was measured with a barrier height of 0.43 eV for the ALD-deposited edge contact TiS2/MoS2. Thermal ALD processes of the other possible edge contact materials to 2D semiconductors are being developed, including TiN. Furthermore, we have studied a scalable process for multi-tier edge contact fabrication using ALD, which would be more difficult to achieve via PVD, demonstrating the promising potential of ALD for forming electrical contacts to 2D semiconductors. The authors are grateful to NSF (ECCS 2227346), the NSF 2DCC MIP platform (DMR 2039351), and The Pennsylvania State University for support of this work. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.