3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field
- 22 January 2016
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 37 (3) , 314-316
Abstract
A critical issue for SiC trench gate metal-oxide- semiconductor field-effect transistors (UMOSFETs) is gate oxide shielding from the electric field at the trench bottom. In this letter, low ON-resistance with low gate electric field was achieved in a 3.3-kV-class UMOSFET with a unique hexagonal buried p-base region formed by MeV ion implantation. The shielding effect was further enhanced by a self-aligned trench bottom shielding region. The specific ON-resistance, with and without the trench bottom shielding region, was 8.3 and 9.4 mΩcm 2 , respectively. The blocking voltage in each case was ~3800 V. The electric field in the gate oxide with the trench bottom shielding region was reduced to 2.5 MV/cm at 3300 V.Keywords
Funding Information
- Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society within the Ministry of Economy, Trade and Industry
- New Energy and Industrial Technology Development Organization, Japan
This publication has 11 references indexed in Scilit:
- Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFETJapanese Journal of Applied Physics, 2016
- Low Rons in 3kV 4H-SiC UMOSFET with MeV Implanted Buried P-Base RegionMaterials Science Forum, 2015
- Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV2014
- 4H-SiC Trench MOSFET with Bottom Oxide ProtectionMaterials Science Forum, 2014
- Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal FacesIEEE Transactions on Electron Devices, 2013
- Determination of optimum structure of 4H-SiC Trench MOSFET2012
- High performance SiC trench devices with ultra-low ron2011
- Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) faceIEEE Electron Device Letters, 2002
- High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) faceIEEE Electron Device Letters, 1999
- High-voltage accumulation-layer UMOSFET's in 4H-SiCIEEE Electron Device Letters, 1998