Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces
Authors:
- 18 January 2013
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 60 (3) , 1260-1262
Abstract
Effects of nitric oxide (NO) and nitrous oxide (N 2 O) annealing on 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on the (0001), (0001̅), and (112̅0) faces are investigated. MOSFETs on (112̅0) exhibited high channel mobility (108 cm 2 /V·s) compared to those on (0001) (29-37 cm 2 /V·s) and (0001̅) (39-46 cm 2 /V·s). The MOSFET characteristics are discussed in terms of oxidation taking place during the nitridation annealing and crystal faces.Keywords
This publication has 16 references indexed in Scilit:
- Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap densityApplied Physics Letters, 2011
- Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonanceApplied Physics Letters, 2011
- Challenges in SiC power MOSFET designSolid-State Electronics, 2008
- Nitridation anisotropy in SiO2∕4H–SiCJournal of Applied Physics, 2005
- Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N2O OxidationJapanese Journal of Applied Physics, 2005
- N2O Processing Improves the 4H-SiC:SiO2 InterfaceMaterials Science Forum, 2002
- Thermal Oxidation of Silicon in Nitrous Oxide at High PressuresJournal of the Electrochemical Society, 2001
- Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiCApplied Physics Letters, 2000
- Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) faceApplied Physics Letters, 2000
- Orientation Dependence of the Oxidation of SiC SurfacesPhysica Status Solidi (a), 1997