Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination
- 27 January 2014
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 104 (4) , 042107
Abstract
With Fourier-transform photocurrent spectroscopy and spectral response measurements, we show that silicon doped with sulfur by femtosecond laser irradiation generates excess carriers, when illuminated with infrared light above 1100 nm. Three distinct sub-bandgap photocurrent features are observed. Their onset energies are in good agreement with the known sulfur levels S+, S0, and S20. The excess carriers are separated by a pn-junction to form a significant photocurrent. Therefore, this material likely demonstrates the impurity band photovoltaic effect.Keywords
This publication has 27 references indexed in Scilit:
- Analysis of sunlight loss for femtosecond laser microstructed silicon and its solar cell efficiencyApplied Physics A, 2010
- Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate LevelsPhysical Review Letters, 1997
- Efficiency improvements of silicon solar cells by the impurity photovoltaic effectJournal of Applied Physics, 1994
- Comment on ‘‘35% efficient nonconcentrating novel silicon solar cell’’Applied Physics Letters, 1993
- Spectral behavior of solar cells based on the ‘‘junction near local defect layer’’ designApplied Physics Letters, 1993
- Comment on ‘‘35% efficient nonconcentrating novel silicon solar cell’’Applied Physics Letters, 1993
- Comment on ‘‘35% efficient nonconcentrating novel silicon solar cell’’Applied Physics Letters, 1993
- Silicon solar cells: evolution, high-efficiency design and efficiency enhancementsSemiconductor Science and Technology, 1993
- 35% efficient nonconcentrating novel silicon solar cellApplied Physics Letters, 1992
- Detailed Balance Limit of Efficiency ofp-nJunction Solar CellsJournal of Applied Physics, 1961