Abstract
This article presents a V-/E-band broadband low-noise amplifier (LNA) implemented in 22-nm CMOS fully depleted silicon-on-insulator (FDSOI) technology, covering a 3-dB bandwidth from 60.6 to 74.4 GHz. The LNA achieves a measured average noise figure (NF) of 3.23 dB across 3-dB bandwidth, with a minimum NF of 2.32 dB at 65 GHz. A novel joint-feeding gate/source architecture based on a three-line coupler enables simultaneous noise and power matching (SNPM) and transconductance ( $\boldsymbol {g}_{\boldsymbol {m}}$ ) boosting, overcoming limitations of the conventional common-gate (CG) amplifier. The proposed LNA occupies a compact area, consumes moderate power, and achieves state-of-the-art noise performance, making it well suited for millimeter-wave (mmWave) backhaul and fixed wireless access in next generation communication.
Funding Information
  • HORIZONKDT-JU-2021-1-IA “SHIFT” (101096256)
  • HORIZON-KDT-JU-2023-1-IA “SOIL” (101139785)
  • Horizon-JU-SNS-2023 ”6G-REFERENCE” (101139155)
  • Horizon-JU-SNS-2024 “X-TREME 6G” (101192681)
  • Swiss State Secretariat for Education, Research, and Innovation (SER) through SwissChips Initiative

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