Hua Wang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Recognitions
Hua Wang has a total of 170 co-authors. Here are the top co-authors by number of shared publications:
- Sensen Li
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA
17 shared publications - Min-Yu Huang
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
11 shared publications - Jong Seok Park
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
10 shared publications - Naga Sasikanth Mannem
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
10 shared publications - Taiyun Chi
Rice University
10 shared publications - Basem Abdelaziz Abdelmagid
ETH Zurich
9 shared publications
Latest Publications
- 1 November 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 61 (11) , 6197-6215
A Thermally Adaptive Ku-Band Array-Scalable Transmitter Incorporating VSWR-Resilient PA for Ground Terminal Phased-Array Applications
- 1 November 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 61 (11) , 6197-6215
A Thermally Adaptive Ku-Band Array-Scalable Transmitter Incorporating VSWR-Resilient PA for Ground Terminal Phased-Array Applications
- 1 September 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 44 (17) , 7428-7440
Monolithically Integrated Reconfigurable Silicon Photonic Transmitter in 45 nm CMOS SOI
- 1 September 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 44 (17) , 7428-7440
Monolithically Integrated Reconfigurable Silicon Photonic Transmitter in 45 nm CMOS SOI
- Open Access
- 8 June 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Electromagnetics, Antennas and Propagation
- Vol. 2, 1-25
AI-Assisted Data-Driven RFIC Designs: A Review of Recent Progress, Design Frameworks, and Challenges
Radio-Frequency Integrated Circuits (RFICs) are foundational to modern wireless and wireline communication and sensing applications, including high-speed wireless 5G and 6G networks, satellite links, wireline interconnects for chip-to-chip and processor-to-memory signaling, and various radar and imaging systems. Distinct from analog or digital circuit design, RF circuits require the joint design and optimization of three-dimensional (3D) electromagnetic (EM) structures as passive components (governed by Maxwell’s equations) and nonlinear transistors as active gain components (determined by device physics). With this multiphysics nature, traditional RFIC design flows are human-centric and rely heavily on expert intuition and extensive iterative EM simulations, which often lead to long design cycles and restricted design spaces. Recently, inspired by progress in the photonics, antenna, microwave modeling, and electronic design automation (EDA) communities, artificial intelligence (AI) and machine learning (ML) have gained increasing traction as data-driven tools for augmenting RF circuit design. The goal is to convert EM-and circuit-level data into reusable models, fast evaluators, and inverse-design engines that can accelerate end-to-end RF circuit synthesis from performance specifications (specs) to layouts and/or explore new RF circuits with non-intuitive, non-conventional passive EM components. In this view, data-driven RFIC automation depends not only on model architectures, but also on how EM- and circuit-simulation labels are generated, reused, and verified in downstream design flows. This paper seeks to review this fast-growing technology direction. The paper starts by reviewing AI-assisted surrogate modeling for RFIC EM passives, including surrogates based on tabular, image, and graph representations of on-chip EM passives, together with neural operators that can improve surrogate learning capability. As a unique contribution of this paper, reported data-generation costs, computational resources, and model fidelity are also summarized to clarify practical deployment considerations. We further emphasize sample informativeness, output dimensionality, model reuse, and EM/circuit verification as factors that govern whether a surrogate model can be deployed in an RFIC design loop. Then, we review AI-assisted inverse design methods, including direct end-to-end synthesis, optimization-based inverse design with fast surrogates, and emerging generative-model-assisted approaches. Following that, we summarize representative AI-assisted RFIC silicon demonstrations across mm-Wave and sub-THz bands. Finally, we discuss open challenges and future directions toward reliable data-driven specs-to-layout automation, including data cost, model reuse, verification, and portability, and highlight opportunities for full-loop active-passive co-design and RFIC design automation.
- 8 June 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Electromagnetics, Antennas and Propagation
- Vol. 2, 1-25
Open AccessAI-Assisted Data-Driven RFIC Designs: A Review of Recent Progress, Design Frameworks, and Challenges
Radio-Frequency Integrated Circuits (RFICs) are foundational to modern wireless and wireline communication and sensing applications, including high-speed wireless 5G and 6G networks, satellite links, wireline interconnects for chip-to-chip and processor-to-memory signaling, and various radar and imaging systems. Distinct from analog or digital circuit design, RF circuits require the joint design and optimization of three-dimensional (3D) electromagnetic (EM) structures as passive components (governed by Maxwell’s equations) and nonlinear transistors as active gain components (determined by device physics). With this multiphysics nature, traditional RFIC design flows are human-centric and rely heavily on expert intuition and extensive iterative EM simulations, which often lead to long design cycles and restricted design spaces. Recently, inspired by progress in the photonics, antenna, microwave modeling, and electronic design automation (EDA) communities, artificial intelligence (AI) and machine learning (ML) have gained increasing traction as data-driven tools for augmenting RF circuit design. The goal is to convert EM-and circuit-level data into reusable models, fast evaluators, and inverse-design engines that can accelerate end-to-end RF circuit synthesis from performance specifications (specs) to layouts and/or explore new RF circuits with non-intuitive, non-conventional passive EM components. In this view, data-driven RFIC automation depends not only on model architectures, but also on how EM- and circuit-simulation labels are generated, reused, and verified in downstream design flows. This paper seeks to review this fast-growing technology direction. The paper starts by reviewing AI-assisted surrogate modeling for RFIC EM passives, including surrogates based on tabular, image, and graph representations of on-chip EM passives, together with neural operators that can improve surrogate learning capability. As a unique contribution of this paper, reported data-generation costs, computational resources, and model fidelity are also summarized to clarify practical deployment considerations. We further emphasize sample informativeness, output dimensionality, model reuse, and EM/circuit verification as factors that govern whether a surrogate model can be deployed in an RFIC design loop. Then, we review AI-assisted inverse design methods, including direct end-to-end synthesis, optimization-based inverse design with fast surrogates, and emerging generative-model-assisted approaches. Following that, we summarize representative AI-assisted RFIC silicon demonstrations across mm-Wave and sub-THz bands. Finally, we discuss open challenges and future directions toward reliable data-driven specs-to-layout automation, including data cost, model reuse, verification, and portability, and highlight opportunities for full-loop active-passive co-design and RFIC design automation.
- 24 April 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. PP (00189200) , 1-13
A MEMS-Free 4096-Pixel CMOS E-Nose Array With MOF-Based Molecular Selectivity, In-Pixel Thermal Regeneration, and a Compact Single-Coefficient Bandpass Sigma–Delta ADC
This work presents a CMOS-only [micro-electromechanical systems (MEMS)-free] electronic nose (e-nose) for concurrent multi-gas-sensing applications. The proposed system integrates 4096 capacitance-to-digital converter (CDC) pixels, each implementing a compact bandpass sigma–delta ( $\Sigma \Delta $ ) ADC with a single feedback coefficient and no additional feedforward or feedback paths, achieving each pixel footprint of only $45\times 45~\mu $ m. The e-nose can achieve full baseline recovery and sensor reusability through an in-pixel heater to enable rapid and complete desorption of gas molecules from the sensing surface. The chip also includes 128 temperature-sensing pixels for on-chip thermal monitoring, utilizing a bandgap-based temperature sensor followed by a hybrid active–passive $\Sigma \Delta $ ADC, maintaining the same compact pixel footprint as the CDC pixels. The system operates from a 1.1-V supply with a power consumption of $10.3~\mu $ W per pixel at a 1-MHz sampling rate. To achieve high molecular selectivity, metal–organic framework (MOF) materials are utilized as the sensing interface. Two MOFs: CoNi–Pyz and HKUST-1 are employed for selective detection of ammonia (NH3) and isopropyl alcohol (IPA), respectively, on the same chip. For NH3 sensing, the proposed e-nose achieves a limit of detection (LoD) of 5 ppm, a sensitivity of 0.012 ( $\Delta $ C/C)/ppm, and a wide sensing range from 5 to 1000ppm. To the best of authors’ knowledge, this work achieves the highest reported density for a CMOS solid-state e-nose and represents the first demonstration of integrating both single and multiple MOF transducer materials directly on a CMOS chip. It also establishes a thermodynamically modulated sensing approach enabled by the in-pixel heater, ensuring full sensor reset and reusability.
- 24 April 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. PP (00189200) , 1-13
A MEMS-Free 4096-Pixel CMOS E-Nose Array With MOF-Based Molecular Selectivity, In-Pixel Thermal Regeneration, and a Compact Single-Coefficient Bandpass Sigma–Delta ADC
This work presents a CMOS-only [micro-electromechanical systems (MEMS)-free] electronic nose (e-nose) for concurrent multi-gas-sensing applications. The proposed system integrates 4096 capacitance-to-digital converter (CDC) pixels, each implementing a compact bandpass sigma–delta ( $\Sigma \Delta $ ) ADC with a single feedback coefficient and no additional feedforward or feedback paths, achieving each pixel footprint of only $45\times 45~\mu $ m. The e-nose can achieve full baseline recovery and sensor reusability through an in-pixel heater to enable rapid and complete desorption of gas molecules from the sensing surface. The chip also includes 128 temperature-sensing pixels for on-chip thermal monitoring, utilizing a bandgap-based temperature sensor followed by a hybrid active–passive $\Sigma \Delta $ ADC, maintaining the same compact pixel footprint as the CDC pixels. The system operates from a 1.1-V supply with a power consumption of $10.3~\mu $ W per pixel at a 1-MHz sampling rate. To achieve high molecular selectivity, metal–organic framework (MOF) materials are utilized as the sensing interface. Two MOFs: CoNi–Pyz and HKUST-1 are employed for selective detection of ammonia (NH3) and isopropyl alcohol (IPA), respectively, on the same chip. For NH3 sensing, the proposed e-nose achieves a limit of detection (LoD) of 5 ppm, a sensitivity of 0.012 ( $\Delta $ C/C)/ppm, and a wide sensing range from 5 to 1000ppm. To the best of authors’ knowledge, this work achieves the highest reported density for a CMOS solid-state e-nose and represents the first demonstration of integrating both single and multiple MOF transducer materials directly on a CMOS chip. It also establishes a thermodynamically modulated sensing approach enabled by the in-pixel heater, ensuring full sensor reset and reusability.
- 21 April 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. PP (00189200) , 1-12
A 40k-Pixel Multimodal Biophysiology Monitoring Platform With 10k Concurrent Electrophysiology Channels and a Mixer-Embedded Σ Δ Impedance Sensor
Understanding complex physiological processes requires the ability to monitor multiple biological modalities concurrently, as electrical, ionic, and biochemical processes are tightly coupled and cannot be holistically described by single-mode sensors. This article presents a 40 nm CMOS multimodal cellular physiology monitoring platform that integrates 40 960 reconfigurable pixels at $10.8~\mu $ m pixel pitch. Each pixel supports electrophysiology recording, electrochemical sensing, ion-selective potentiometry, shadow imaging, and impedance spectroscopy, together with programmable voltage or current stimulation. Up to 10 240 pixels are recorded concurrently for extracellular potentials without direct pixel multiplexing, enabling a 23.6% effective sensing area and 25% peak simultaneous readout over a $1.4\times 3.5$ mm2 active field of view. For impedance sensing, a mixer-embedded delta–sigma modulator (ME-DSM) performs direct digitization, improving robustness to electrode offset and harmonic interference. The platform is validated with potassium-selective ion measurements, cyclic voltammetry of catecholamine-related neurotransmitters, and in vivo zebrafish cardiac potential recording, illustrating applicability from single cells to live small-animal models on-chip. We report a comprehensive and multimodal physiology-monitoring system.
- 21 April 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. PP (00189200) , 1-12
A 40k-Pixel Multimodal Biophysiology Monitoring Platform With 10k Concurrent Electrophysiology Channels and a Mixer-Embedded Σ Δ Impedance Sensor
Understanding complex physiological processes requires the ability to monitor multiple biological modalities concurrently, as electrical, ionic, and biochemical processes are tightly coupled and cannot be holistically described by single-mode sensors. This article presents a 40 nm CMOS multimodal cellular physiology monitoring platform that integrates 40 960 reconfigurable pixels at $10.8~\mu $ m pixel pitch. Each pixel supports electrophysiology recording, electrochemical sensing, ion-selective potentiometry, shadow imaging, and impedance spectroscopy, together with programmable voltage or current stimulation. Up to 10 240 pixels are recorded concurrently for extracellular potentials without direct pixel multiplexing, enabling a 23.6% effective sensing area and 25% peak simultaneous readout over a $1.4\times 3.5$ mm2 active field of view. For impedance sensing, a mixer-embedded delta–sigma modulator (ME-DSM) performs direct digitization, improving robustness to electrode offset and harmonic interference. The platform is validated with potassium-selective ion measurements, cyclic voltammetry of catecholamine-related neurotransmitters, and in vivo zebrafish cardiac potential recording, illustrating applicability from single cells to live small-animal models on-chip. We report a comprehensive and multimodal physiology-monitoring system.
- 4 February 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 44 (9) , 3649-3661
Multibeam Optical Phased Array and Monolithically Integrated Electro-Optic Modulator for High-Performance Wireless Communication
In this paper, we present a new transmitter that consists of multibeam generating optical phased array (OPA) and a monolithically integrated electro-optic (EO) modulator, achieving compact system area and high energy efficiency, for optical wireless communication (OWC). A concept of using both path length difference between the routing waveguides in the OPA and wavelength-division multiplexing is demonstrated to simultaneously create multiple beams in free-space and transmit data to receivers at different location, with a small device footprint. To further reduce the power consumption and area of the transmitter, the EO modulator and CMOS driver are co-designed and integrated in a single chip, using 45-nm monolithic silicon photonics technology. The EO modulator leverages an optical digital-to-analog converter structure, supporting both two-level and four-level pulsed amplitude modulations. The chip size of the 101-element OPA is 180 mm2, and an active area of the co-integrated modulator and CMOS driver is 3.4 mm2. The combined OPA and modulator system achieves maximum data rate and power consumption per beam/channel of 54 Gbps and 7.11 pJ/bit, respectively.
- 4 February 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 44 (9) , 3649-3661
Multibeam Optical Phased Array and Monolithically Integrated Electro-Optic Modulator for High-Performance Wireless Communication
In this paper, we present a new transmitter that consists of multibeam generating optical phased array (OPA) and a monolithically integrated electro-optic (EO) modulator, achieving compact system area and high energy efficiency, for optical wireless communication (OWC). A concept of using both path length difference between the routing waveguides in the OPA and wavelength-division multiplexing is demonstrated to simultaneously create multiple beams in free-space and transmit data to receivers at different location, with a small device footprint. To further reduce the power consumption and area of the transmitter, the EO modulator and CMOS driver are co-designed and integrated in a single chip, using 45-nm monolithic silicon photonics technology. The EO modulator leverages an optical digital-to-analog converter structure, supporting both two-level and four-level pulsed amplitude modulations. The chip size of the 101-element OPA is 180 mm2, and an active area of the co-integrated modulator and CMOS driver is 3.4 mm2. The combined OPA and modulator system achieves maximum data rate and power consumption per beam/channel of 54 Gbps and 7.11 pJ/bit, respectively.
- 7 January 2026
- Published by Springer Nature in Nature Electronics
- Vol. 9 (1) , 84-92
High-power millimetre-wave switches on silicon using displacement fields and tunnelling currents
- 7 January 2026
- Published by Springer Nature in Nature Electronics
- Vol. 9 (1) , 84-92
High-power millimetre-wave switches on silicon using displacement fields and tunnelling currents