Resistive switching kinetics of electrolyte-gated polyaniline-based memristive devices
Authors:
- Maria V. SerenkoMSMaria V. Serenko
- Nikita V. PrudnikovNPNikita V. Prudnikov
- Andrey V. EmelyanovAEAndrey V. Emelyanov
- Aleksei A. StupnikovASAleksei A. Stupnikov
- Yulia N. MalakhovaYMYulia N. Malakhova
- Dmitry V. SavinovDSDmitry V. Savinov
- Victor V. ErokhinVEVictor V. Erokhin
- 1 February 2024
- journal article
- research article
- Published by Elsevier in Organic Electronics
- Vol. 126
Abstract
No abstract availableKeywords
Funding Information
- Russian Foundation for Basic Research (20-57-7801)
- National Research Council Canada
This publication has 28 references indexed in Scilit:
- Organic electronics for neuromorphic computingNature Electronics, 2018
- In-memory computing with resistive switching devicesNature Electronics, 2018
- Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuitsNature Communications, 2018
- Polyaniline-based memristive microdevice with high switching rate and enduranceApplied Physics Letters, 2018
- Reservoir computing using dynamic memristors for temporal information processingNature Communications, 2017
- First steps towards the realization of a double layer perceptron based on organic memristive devicesAIP Advances, 2016
- A physical-based equivalent circuit model for an organic/electrolyte interfaceOrganic Electronics, 2016
- Hardware elementary perceptron based on polyaniline memristive devicesOrganic Electronics, 2015
- Electrical properties of an organic memristive systemApplied Physics A, 2011
- Electrochemical Control of the Conductivity in an Organic Memristor: A Time-Resolved X-ray Fluorescence Study of Ionic Drift as a Function of the Applied VoltageACS Applied Materials & Interfaces, 2009