The investigation of properties of silicon nitride films obtained by RPECVD from hexamethyldisilazane
Authors:
- 1 April 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 113-114, 614-617
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of AmmoniaJapanese Journal of Applied Physics, 1993
- The preparation, properties and applications of silicon nitride thin films deposited by plasma-enhanced chemical vapor depositionThin Solid Films, 1991
- The preparation, characterization and application of plasma-enhanced chemically vapour deposited silicon nitride films deposited at low temperaturesThin Solid Films, 1991
- Properties of low-pressure chemical vapor deposited dielectric films from hexamethyldisilazaneJournal of Vacuum Science & Technology A, 1989
- Plasma Organosilicon Polymers: Deposition, Characterization, and Application in Multilayer ResistJournal of the Electrochemical Society, 1985