Growth and properties of GaxAl1-xN compounds
Authors:
- J HagenJHJ Hagen
- W ClarkWCW Clark
Open Access
- 2 February 1978
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 11 (4) , L143-L146
Abstract
Thin films of alloys in the GaxAl1-xN system have been prepared by vapour phase deposition onto sapphire substrates. The absorption edge and highest cathodoluminescence peak energies vary smoothly through the range with some bowing.Keywords
This publication has 7 references indexed in Scilit:
- Epitaxially grown AlN and its optical band gapJournal of Applied Physics, 1973
- Luminescence in GaNJournal of Luminescence, 1973
- The electronic band structures of the wide band gap semiconductors GaN and A1NSolid State Communications, 1972
- Fundamental absorption edge in GaN, InN and their alloysSolid State Communications, 1972
- Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substratesJournal of Crystal Growth, 1971
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition EnergiesPhysical Review B, 1969
- On the preparation, optical properties and electrical behaviour of aluminium nitrideJournal of Physics and Chemistry of Solids, 1967