New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles

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Abstract
This paper proposes a method using electron and proton Single Event Upset sensitivities of a device to deduce all simulation parameters related to an RPP approach. It is shown that for 45-nm DDR memory, the RPP approach is still relevant and the crossing of proton and electron data makes it possible to constrain and properly define the associated parameters. Heavy-ion prediction is also presented.

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