Self-aligned contacts to ion implanted S/D regions in 4H-SiC

This publication has 31 references indexed in Scilit:

• Simultaneous Formation of Ohmic Contacts on p +- and n +-4H-SiC Using a Ti/Ni Bilayer
  Journal of Electronic Materials, 2013
• Raman study of Ni and Ni silicide contacts on 4H– and 6H–SiC
  Thin Solid Films, 2012
• Oriented growth of silicide and carbon in SiC-based sandwich structures with nickel
  Materials Chemistry and Physics, 2008
• Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices
  Materials Science Forum, 2006
• Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?
  Microelectronic Engineering, 2003
• Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
  Materials Science Forum, 2003
• Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC
  Materials Science and Engineering: B, 2003
• Solubility limits of dopants in 4H–SiC
  Applied Surface Science, 2003
• Silicides and ohmic contacts
  Materials Chemistry and Physics, 1998
• Electrical characteristics of thin Ni2Si, NiSi, and NiSi2 layers grown on silicon
  Journal of Electronic Materials, 1983