Ni-B/hBN katkılı TMAB ve sakarinli kaplama malzemelerinde Ni için X-ışını floresans parametrelerinin ve valans elektronik yapısının incelenmesi

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Abstract
In this investigation, K shell valance electronic structure of Ni in Ni-B alloy coatings were studied by means of collecting the X-ray emission and XRD spectra. The data obtained were evaluated in terms of the K beta/K alpha X-ray intensity ratios and XRD data. The coated alloys were fabricated with using different concentrations of hexagonal boron nitride (hBN) for this study by electrochemical storage method. Besides saccharine and trimethylamine borane complex (TMAB) were added the current samples at constant concentration. The current specimens were excited by 59.5 keV photons from a 241Am annular radioactive source. K shell X-rays emitted by the specimens were detected by means of an Ultra-LEGe detector with a resolution of 150 eV at 5.9 keV. The K shell X-ray intensity ratios of Ni-B alloys are checked with pure Ni. Variations in the current outcomes were interpreted by the variation in valence electronic structures of Ni in Ni-B/hBN coating materials with doped TMAB and saccharine.

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