A low-threshold room-temperature injection laser
Authors:
- M. PanishMPM. Panish
- P. FoyPFP. Foy
- 1 April 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 5 (4) , 211-212
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A technique for the preparation of low-threshold room-temperature GaAs laser diode structuresIEEE Journal of Quantum Electronics, 1969
- Optimum Stripe Width for Continuous Operation of GaAs Junction LasersJournal of Applied Physics, 1969
- Effect of band shapes on carrier distribution at high temperatureIEEE Journal of Quantum Electronics, 1968
- Optical and Electrical Properties of Epitaxial and Diffused GaAs Injection LasersJournal of Applied Physics, 1967
- Effect of Band Tails on Stimulated Emission of Light in SemiconductorsPhysical Review B, 1966
- TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERSApplied Physics Letters, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- High-efficiency injection laser at room temperatureProceedings of the IEEE, 1964
- A proposed class of hetero-junction injection lasersProceedings of the IEEE, 1963
- Proposal for reduction of diffraction losses in P-N lasersPhysica, 1963