A technique for the preparation of low-threshold room-temperature GaAs laser diode structures
Authors:
- I. HayashiIHI. Hayashi
- S. SumskiSSS. Sumski
- 1 April 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 5 (4) , 210-211
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A low-threshold room-temperature injection laserIEEE Journal of Quantum Electronics, 1969
- Ga-Al-As: Phase, thermodynamic and optical propertiesJournal of Physics and Chemistry of Solids, 1969
- The solid solubility limits of zinc in GaAs at 1000Journal of Physics and Chemistry of Solids, 1967