Device Characteristics of Polycrystalline Si0.84Ge0.16 Thin Film Transistors Grown from Si2H6 and GeH4 Source Gases
Authors:
- Jin-Won KimJKJin-Won Kim
- Myung-Kwan RyuMRMyung-Kwan Ryu
- Ki-Bum KimKKKi-Bum Kim
- Chang-Won HwangCHChang-Won Hwang
- Byung Seong BaeBBByung Seong Bae
- Min-Koo HanMHMin-Koo Han
- Sang-Joo KimSKSang-Joo Kim
- 1 June 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (6B) , L757
Abstract
Polycrystalline Si0.84Ge0.16 alloy film was made by solid phase crystallization (SPC) of an amorphous film deposited using Si2H6 and GeH4 source gases by low pressure chemical vapor deposition (LPCVD). The grain size of the film was about 540 nm and the preferred orientation was (111). Both n-channel and p-channel polycrystalline Si0.84Ge0.16 thin film transistors were successfully fabricated using a high temperature process. The field-effect mobilities of n- and p-channel devices were 13 and 29 cm2/V·s, which were improved to 33 and 38 cm2/V·s, respectively, after electron-cyclotron resonance (ECR) hydrogen plasma treatment.Keywords
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