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Device Characteristics of Polycrystalline Si0.84Ge0.16 Thin Film Transistors Grown from Si2H6 and GeH4 Source Gases
Publication with shared reference
10.1143/jjap.35.l757
Home
Publications
Device Characteristics of Polycrystalline Si0.84Ge0.16 Thin Film Transistors Grown from Si2H6 and GeH4 Source Gases
Publication with shared reference
10.1143/jjap.35.l757
Publications with shared reference:
Device Characteristics of Polycrystalline Si
0.84
Ge
0.16
Thin Film Transistors Grown from Si
2
H
6
and GeH
4
Source Gases
0
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