Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate
Open Access
- 4 January 2023
- journal article
- research article
- Published by MDPI AG in Electronics
- Vol. 12 (2) , 259
Abstract
In this study, we investigated the impact of intrinsic output conductance (goi) on the short-circuit current-gain cut-off frequency (fT) in InxGa1-xAs/In0.52Al0.48As quantum-well (QW) high-electron-mobility transistors. At its core, we attempted to extract values of fT using a simplified small-signal model (SSM) of the HEMTs and to derive an analytical formula for fT in terms of extrinsic model parameters that are related with intrinsic model parameters of a general SSM. We projected how fT was influenced by goi in HEMTs, emphasizing that the improvement in electrostatic integrity would also be of critical importance to fully benefit from scaling down Lg.Keywords
Funding Information
- Civil-Military Technology Cooperation program (19-CM-BD-05)
This publication has 37 references indexed in Scilit:
- InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHzIEEE Electron Device Letters, 2012
- Impact of T‐gate electrode on gate capacitance in In0.7Ga0.3As HEMTsphysica status solidi (c), 2010
- Logic Suitability of 50-nm $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ HEMTs for Beyond-CMOS ApplicationsIEEE Transactions on Electron Devices, 2007
- Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor ApplicationsIEEE Transactions on Nanotechnology, 2005
- An Intrinsic Delay Extraction Method for Schottky Gate Field Effect TransistorsIEEE Electron Device Letters, 2004
- 547-GHz$f_t$In$_0.7$Ga$_0.3$As–In$_0.52$Al$_0.48$As HEMTs With Reduced Source and Drain ResistanceIEEE Electron Device Letters, 2004
- 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff FrequencyJapanese Journal of Applied Physics, 1999
- Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETsIEEE Transactions on Electron Devices, 1988
- A new method for determining the FET small-signal equivalent circuitIEEE Transactions on Microwave Theory and Techniques, 1988
- Simplified GaAs m.e.s.f.e.t. model to 10 GHzElectronics Letters, 1977