Solid-phase crystallization of amorphous SiGe films deposited by LPCVD on SiO2 and glass
Authors:
- J OlivaresJOJ Olivares
- A Rodrı́guezARA Rodrı́guez
- J SangradorJSJ Sangrador
- T Rodrı́guezTRT Rodrı́guez
- C BallesterosCBC Ballesteros
- A KlingAKA Kling
- 1 January 1999
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 337 (1-2) , 51-54
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Device Characteristics of Polycrystalline Si0.84Ge0.16 Thin Film Transistors Grown from Si2H6 and GeH4 Source GasesJapanese Journal of Applied Physics, 1996
- Crystallization of amorphous hydrogenated Si1−xGex filmsPhysica Status Solidi (a), 1995
- Solid phase crystallization of amorphous Si1−xGex films deposited on SiO2 by molecular beam epitaxyJournal of Applied Physics, 1995
- Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applicationsJournal of Applied Physics, 1994