Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications
Authors:
- B. KaczerBKB. Kaczer
- A. De KeersgieterAKA. De Keersgieter
- G. GroesenekenGGG. Groeseneken
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 360-366
Abstract
A method to determine the breakdown position in short channel nMOSFETs is introduced. We find that soft breakdown occurs exclusively in the transistor channel while the hardest circuit killing breakdowns occur above the source and drain extension regions. Since these breakdowns make up only a small fraction of all breakdowns, a relaxation of the reliability specification is possible.Keywords
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