Experimental evaluation of SiC MOSFET and GaN HEMT losses in inverter operation

Authors:
Publisher website
Google Scholar
Abstract
Wideband-gap semiconductor devices are rapidly gaining ground in power converters in a wide variety of applications, given their ability to block higher voltages, compared to typical devices, with lower on-state voltages. The characterization of losses for Gallium Nitride (GaN) or Silicon Carbide (SiC) semiconductor devices, in particular for inverter operation, is not straightforward, specially taking into consideration that the typical losses values provided by manufacturers are obtained in direct current (DC) for a given current and voltage. This paper measures the average dissipated power in inverter operation for different input voltages and different output currents of two promising devices, SiC MOSFET and GaN HEMT, chosen from two leading manufacturers. The losses measurement is obtained indirectly by the direct measurement of the devices temperature.

This publication has 8 references indexed in Scilit: