Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

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Abstract
Silicon co-integration offers compelling scaleup opportunities for quantum computing. In this framework, cryogenic temperature is required for the coherence of solid-state quantum devices. This study reports the characterization of an N-MOS quantum-dot dedicated structure below 100 mK. The device under test is built in thin silicon film fabricated with 28 nm high-k metal gate ultra-thin body and ultra-thin buried oxide (UTBB) advanced CMOS technology. The MOS structure is functional with improved performances at cryogenic temperature. The results open new research avenues in CMOS co-integration for quantum computing applications within the FD-SOI platform.
Funding Information
  • Canada First Research Excellence Fund
  • National Science Engineering Research Council of Canada
  • Fonds de Recherche du Québec Nature et Technologies

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