Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications
Authors:
- 1 June 2013
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 385-391
Abstract
With the trend toward more electrical aircraft, Silicon Carbide power switches could be heavily used for high temperatures applications within the aircraft. The assessment of the reliability of such power electronic components is a key element for the qualification process. In this study we focused on the reliability of the MOSFET gate oxide which is known to be the more fragile part of these components.Keywords
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