Electrical Properties of Diamond for Device Applications
Authors:
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 416
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Diamond devices and electrical propertiesDiamond and Related Materials, 1995
- The optical and electronic properties of semiconducting diamondPhilosophical Transactions A, 1993
- Electrical conduction in homoepitaxial, boron-doped diamond filmsJournal of Physics: Condensed Matter, 1992
- Capacitance-voltage measurements on metal-SiO/sub 2/-diamond structures fabricated withIEEE Transactions on Electron Devices, 1991
- Properties of Boron-Doped Epitaxial Diamond FilmsJapanese Journal of Applied Physics, 1990
- Field-Effect Transistors using Boron-Doped Diamond Epitaxial FilmsJapanese Journal of Applied Physics, 1989
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960
- Unusual phosphorescence of a diamondPhysica, 1952
- Theory of Impurity Scattering in SemiconductorsPhysical Review B, 1950