Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires
Authors:
- D.L. DheerajDDD.L. Dheeraj
- G. PatriarcheGPG. Patriarche
- J.C. HarmandJHJ.C. Harmand
- H. WemanHWH. Weman
- B.O. FimlandBFB.O. Fimland
- 1 March 2009
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 311 (7) , 1847-1850
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Zinc blende GaAsSb nanowires grown by molecular beam epitaxyNanotechnology, 2008
- GaP/GaAsP/GaP core–multishell nanowire heterostructures on (111) siliconNanotechnology, 2007
- Self-Directed Growth of AlGaAs Core−Shell Nanowires for Visible Light ApplicationsNano Letters, 2007
- Growth and Characterization of InP Nanowires with InAsP InsertionsNano Letters, 2007
- Surface diffusion effects on growth of nanowires by chemical beam epitaxyJournal of Applied Physics, 2007
- Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor depositionApplied Physics Letters, 2006
- Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxyNanotechnology, 2006
- Growth related aspects of epitaxial nanowiresNanotechnology, 2006
- Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxyJournal of Crystal Growth, 2005
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964