The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor

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Abstract
This study compared the effectiveness of gallium nitride (GaN) with a single carbon-doped (C-doped) buffer layer and a composite carbon/iron-doped (C/Fe-doped) buffer layer within an AlGaN/GaN high-electron-mobility transistor (HEMT). In traditional power devices, Fe-doping has a large memory effect, causing Fe ions to diffuse outwards, which is undesirable in high-power-device applications. In the present study, a C-doped GaN layer was added above the Fe-doped GaN layer to form a composite buffer against Fe ion diffusion. Direct current (DC) characteristics, pulse measurement, low-frequency noise, and variable temperature analysis were performed on both devices. The single C-doped buffer layer in the AlGaN/GaN HEMT had fewer defects in capturing and releasing carriers, and better dynamic characteristics, whereas the composite C/Fe-doped buffers, by suppressing Fe migration toward the channel, showed higher vertical breakdown voltage and lower sheet resistance, and still demonstrated potential for further performance tuning to achieve enhanced semi-insulating behavior. With optimized doping concentrations and layer thicknesses, the dual-layer configuration offers a promising path toward improved trade-offs between leakage suppression, trap control, and dynamic performance for next-generation GaN-based power devices.
Funding Information
  • National Science Council of Taiwan (NSC 110-2218-E-182-001, NSTC 114-2640-E-006-006)
  • National Science and Technology Council of Taiwan (NSC 110-2218-E-182-001, NSTC 114-2640-E-006-006)

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