A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE
Authors:
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 242
Abstract
GaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.Keywords
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