InGaAs shallow junction fabrication using Langmuir–Blodgett film diffusion source
Authors:
- 21 May 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (21) , 2132-2134
Abstract
A new source of cadmium diffusion in In0.53Ga0.47As has been developed. Langmuir–Blodgett (LB) deposited monolayers of cadmium arachidate have been used as a source of cadmium. The LB film has been characterized by grazing incidence infrared spectroscopy and Auger electron spectroscopy. Acceptor profiles obtained by differential Hall technique are presented. Highly doped (NA =2×1019 cm−3) shallow (xj ≊0.1–0.4 μm), p+‐n junctions are obtained. Mesa‐type p‐i‐n diodes with 125 μm diameter, ideality factor =1.3, Idark =5 nA at 20 V reverse bias, and Vbreakdown =30 V have been fabricated.Keywords
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