Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface
Authors:
- Liegen HuangLHLiegen Huang
- Yuan LiYLYuan Li
- Wenliang WangWWWenliang Wang
- Xiaochan LiXLXiaochan Li
- Yulin ZhengYZYulin Zheng
- Haiyan WangHWHaiyan Wang
- Zichen ZhangZZZichen Zhang
- Guoqiang LiGLGuoqiang Li
- 1 March 2018
- journal article
- research article
- Published by Elsevier in Applied Surface Science
- Vol. 435, 163-169
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (51572091, 51372001)
- National Science Fund for Excellent Young Scholars of China (51422203)
- Natural Science Foundation for Doctor start of Guangdong Province (2017A030310518)
- China Postdoctoral Science Foundation (2017M610520)
- Outstanding Youth Foundation of Guangdong Scientific Committee (S2013050013882)
- Key Project in Science and Technology of Guangdong Province (2014B010119001, 2014B010121004, 2011A080801018)
- Strategic Special Funds for LEDs of Guangdong Province (2011A081301010, 2011A081301012</gn7 and <gn7>2012A080302002)
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