Voltage-controlled magnetic anisotropy based physical unclonable function

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Abstract
We design a spintronic physical unclonable function (PUF) based on sub-100 nm voltage-controlled magnetic anisotropy hybrid magnetic tunnel junctions (VCMA-MTJs). This complementary metal-oxide-semiconductor VCMA-MTJ (CMOS/VCMA-MTJ) PUF architecture was evaluated by combining micromagnetic simulations, Verilog-A modeling, and circuit-level simulations. The PUF architecture, comprising four 16 rows × 16 columns arrays, demonstrates effective read and write operations using conventional voltage sensing that are orders of magnitudes lower than previous spintronic-based PUFs. This study proves the potential of the proposed solution in security applications based on hardware authentication.
Funding Information
  • Ministero dell'Università e della Ricerca (H25F21001420001)

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