Variation of photoluminescence with carrier concentration in GaN
Authors:
- R.D. CunninghamRCR.D. Cunningham
- R.W. BranderRBR.W. Brander
- N.D. KneeNKN.D. Knee
- D.K. WickendenDWD.K. Wickenden
- 31 March 1972
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 5 (1) , 21-31
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substratesJournal of Crystal Growth, 1971
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971
- Absorption, Reflectance, and Luminescence of GaN Single CrystalsPhysical Review B, 1971
- Low-Temperature Luminescence of GaNJournal of Applied Physics, 1970
- OPTICAL ABSOPTION OF GaNApplied Physics Letters, 1970
- Optical studies of the phonons and electrons in gallium nitrideSolid State Communications, 1970
- Luminescent properties of GaNSolid State Communications, 1970
- Chapter 9 Effects of Free Carriers on the Optical Properties1967
- Optical Properties of Lead-Salt and III–V SemiconductorsJournal of Applied Physics, 1961
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954