Growth and properties of single domain GaAs, AlGaAs and their heterostructures on Si by MOCVD and MBE
Authors:
- Masahiro AkiyamaMAMasahiro Akiyama
- Seiji NishiSNSeiji Nishi
- Katsuzo KaminishiKKKatsuzo Kaminishi
- 1 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3) , 19-30
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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