Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution
- 21 June 2021
- journal article
- research article
- Published by Springer Nature in Nature Electronics
- Vol. 4 (7) , 478-485
Abstract
No abstract availableKeywords
Funding Information
- China Scholarship Council (201806290005)
- RCUK | Engineering and Physical Sciences Research Council (EP/R022739/1, EP/R022739/1, EP/R022739/1)
This publication has 45 references indexed in Scilit:
- Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistorsMicroelectronics Reliability, 2014
- Effects of carbon on the electrical and optical properties of InN, GaN, and AlNPhysical Review B, 2014
- Direct imaging of carrier motion in organic transistors by optical second-harmonic generationNature Photonics, 2007
- Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on SiliconIEEE Transactions on Electron Devices, 2005
- Surface potential measurements of AlGaN∕GaN high-electron-mobility transistors by Kelvin probe force microscopyApplied Physics Letters, 2004
- Micro-Raman Temperature Measurements for Electric Field Assessment in Active AlGaN–GaN HFETsIEEE Electron Device Letters, 2004
- Characterization of semiconductor interfaces by second-harmonic generationSurface Science Reports, 1999
- Static and high-frequency electric fields in silicon MOS and MS structures probed by optical second-harmonic generationPhysical Review B, 1997
- dc-electric-field-induced second-harmonic generation in Si(111)--Cr metal-oxide-semiconductor structuresPhysical Review B, 1996
- Nonlinear electroreflectance from gallium nitride using optical second-harmonic generationPhysical Review B, 1996