Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers
Authors:
- 3 August 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 69 (5) , 796-799
Abstract
It is demonstrated that the concept of surfactant applies to the epitaxial growth of highly strained III-V semiconductors. The pseudomorphic growth regime of the InAs on GaAs(001) is extended from 1.5 to 6 monolayers by the use of Te as surfactant. This delayed plastic relaxation of the strain is correlated with the modification of the growth mode via surface energy minimization.Keywords
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