Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

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Abstract
The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO 2 (HZO) and dielectric (DE) Al 2 O 3 demonstrates a current ratio of $> 100\times $ , a TER (tunneling electroresistance) of $> 50\times $ , multilevel states, $> 10^{4}$ sec retention, and a cycling endurance as high as 10 8 . The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.
Funding Information
  • Ministry of Science and Technology (110-2218-E-003-005, 110-2218-E-A49-014-MBK, 109-2622-8-002-003)
  • Taiwan Semiconductor Research Institute (TSRI) and the Nano Facility Center (NFC), Taiwan

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