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  3. Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory
  4. Publication with shared reference
  5. 10.1109/led.2021.3107940
  1. Home
  2. Publications
  3. Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory
  4. Publication with shared reference
  5. 10.1109/led.2021.3107940

Publications with shared reference:

Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

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