Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors
Authors:
- J.H. ScofieldJSJ.H. Scofield
- N. BorlandNBN. Borland
- D.M. FleetwoodDFD.M. Fleetwood
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (11) , 1946-1952
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
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