Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy
Authors:
- 8 May 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (19) , 2704-2706
Abstract
Ultraviolet photoelectron spectroscopy has been applied to the investigation of modified hole injection barriers in organic light-emitting devices (OLEDs). Different from those reported previously, the indium tin oxide (ITO) surface treated in situ by oxygen plasma possesses a work function of 5.2 eV, and the organic ITO interface thereafter formed shows a 0.5 eV smaller hole injection barrier compared to that on untreated ITO. Insertion of an ultrathin SiO2 layer between the organic and ITO results in a similar reduction of the barrier. This indicates that improved hole injection favors efficient operation of OLEDs, as manifested by enhanced efficiency by the SiO2 insertion.Keywords
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